IRF654A Datasheet. Specs and Replacement
Type Designator: IRF654A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 345 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO220
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IRF654A datasheet
irf654a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VD... See More ⇒
irf650b.pdf
IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has been especially tailored to Fast switc... See More ⇒
irf650a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒
Detailed specifications: IRF642, IRF643, IRF644, IRF644A, IRF644S, IRF645, IRF646, IRF650A, IRFZ46N, IRF710, IRF710A, IRF710S, IRF711, IRF712, IRF713, IRF720, IRF7201
Keywords - IRF654A MOSFET specs
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