AMS6006 MOSFET. Datasheet pdf. Equivalent
Type Designator: AMS6006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26.3 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 203 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
AMS6006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AMS6006 Datasheet (PDF)
ams6006.pdf
SMD Type MOSFETN-Channel MOSFETAMS6006 (KMS6006)SOP-8 Features VDS (V) = 60V ID = 6.3 A (VGS = 10V)1.50 0.15 RDS(ON) 18m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain Super Low Gate Charge6 Drain2 Source7 Drain3 Source8 Drain4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AMA960N | FDMB668P | P1006BTFS | IXFN180N10 | P0610BT | MTDN8233CDV8 | BUK9K18-40E
History: AMA960N | FDMB668P | P1006BTFS | IXFN180N10 | P0610BT | MTDN8233CDV8 | BUK9K18-40E
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918