All MOSFET. D1096 Datasheet

 

D1096 Datasheet and Replacement


   Type Designator: D1096
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.02 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO92
 

 D1096 substitution

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D1096 Datasheet (PDF)

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D1096

DIP Type JFETSilicon N-Channel Junction FETD1096Unit:mmTO-924.8 0.3 3.8 0.3 Features VGDO = -30V ID = 20m A VHF Amplifier, Mixer, Local oscillator0.60 Max0.45 0.1 0.521 31.Gate2.Source1.272.543.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Gate-Drain Voltage VGDO -30V Gate-Source Voltage VGSS -1 Co

Datasheet: AO4444 , AO4476 , AO4492 , AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , RFP50N06 , F501 , IRFP064PBF , KDT3055L , KI010NDS , KI138K , KI1N60 , KI1N60DS , KI2310 .

History: L1N60F | PHP10N60E | SML50C14 | PHP125N06LT | SI1317DL | KU2303D | KX8N60C

Keywords - D1096 MOSFET datasheet

 D1096 cross reference
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