D1096 Specs and Replacement
Type Designator: D1096
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO92
D1096 substitution
- MOSFET ⓘ Cross-Reference Search
D1096 datasheet
d1096.pdf
DIP Type JFET Silicon N-Channel Junction FET D1096 Unit mm TO-92 4.8 0.3 3.8 0.3 Features VGDO = -30V ID = 20m A VHF Amplifier, Mixer, Local oscillator 0.60 Max 0.45 0.1 0.5 2 1 3 1.Gate 2.Source 1.27 2.54 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Gate-Drain Voltage VGDO -30 V Gate-Source Voltage VGSS -1 Co... See More ⇒
Detailed specifications: AO4444, AO4476, AO4492, AO4702, AO4704, AP2322GN, AP9974, BSS138E, IRF1407, F501, IRFP064PBF, KDT3055L, KI010NDS, KI138K, KI1N60, KI1N60DS, KI2310
Keywords - D1096 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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