KDT3055L Datasheet and Replacement
Type Designator: KDT3055L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
- MOSFET Cross-Reference Search
KDT3055L Datasheet (PDF)
kdt3055l.pdf

SMD Type TrMOSFETs ansistorUnit:mmSOT-2236.500.23.000.141 2 3D0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.GateG D S 2.Drain3.Source4.60 (typ) 4.Drain10 7.00.33.500.20.75 (min)1.80 (max)0.02 ~ 0.11.6 0.1Mnsi E orsSMD Type TraOSFstT MarkingMarking3055LMOSFETSMD Type TransistorsKDT3055LTyplacl Characteris
Datasheet: AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , D1096 , F501 , IRFP064PBF , 2N60 , KI010NDS , KI138K , KI1N60 , KI1N60DS , KI2310 , KI2310DS , KI3055 , KI3055DY .
History: 15NM70L-TN3-R | DH150N12B | 12N65KG-TF1-T | 2SK2499-Z | R5016ANJ | BSB280N15NZ3G | ELM13401CA
Keywords - KDT3055L MOSFET datasheet
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History: 15NM70L-TN3-R | DH150N12B | 12N65KG-TF1-T | 2SK2499-Z | R5016ANJ | BSB280N15NZ3G | ELM13401CA



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