All MOSFET. KI1N60DS Datasheet

 

KI1N60DS Datasheet and Replacement


   Type Designator: KI1N60DS
   Marking Code: 01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.2 nC
   tr ⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
   Package: SOT23
 

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KI1N60DS Datasheet (PDF)

 ..1. Size:1067K  kexin
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KI1N60DS

SMD Type MOSFETN-Channel MOSFETKI1N60DSSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 600V ID = 0.4 A (VGS = 10V) RDS(ON) 30 (VGS = 10V)D 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2G 1. Gate2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600

 8.1. Size:233K  kexin
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KI1N60DS

SMD Type MOSFETTransistorsN-Channel Power MOSFETKI1N60 Features1.70 0.1 VDS (V) = 600V ID = 1 A RDS(ON) 10.5 (VGS = 10V)0.42 0.10.46 0.11.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage VGS 30 TC=25 1 Continuous Drain Current IDA TC=100 0.7 Pulsed Drain Current

Datasheet: BSS138E , D1096 , F501 , IRFP064PBF , KDT3055L , KI010NDS , KI138K , KI1N60 , 75N75 , KI2310 , KI2310DS , KI3055 , KI3055DY , KI3305DS , KI502DT , KI7N10DY , KI8810DS .

History: SI2333CDS-T1-GE3 | AP2322GN | HFP13N10

Keywords - KI1N60DS MOSFET datasheet

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