KI1N60DS PDF and Equivalents Search

 

KI1N60DS Specs and Replacement

Type Designator: KI1N60DS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm

Package: SOT23

KI1N60DS substitution

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KI1N60DS datasheet

 ..1. Size:1067K  kexin
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KI1N60DS

SMD Type MOSFET N-Channel MOSFET KI1N60DS SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 600V ID = 0.4 A (VGS = 10V) RDS(ON) 30 (VGS = 10V) D 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 G 1. Gate 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 ... See More ⇒

 8.1. Size:233K  kexin
 ki1n60.pdf pdf_icon

KI1N60DS

SMD Type MOSFET Transistors N-Channel Power MOSFET KI1N60 Features 1.70 0.1 VDS (V) = 600V ID = 1 A RDS(ON) 10.5 (VGS = 10V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 TC=25 1 Continuous Drain Current ID A TC=100 0.7 Pulsed Drain Current ... See More ⇒

Detailed specifications: BSS138E, D1096, F501, IRFP064PBF, KDT3055L, KI010NDS, KI138K, KI1N60, 18N50, KI2310, KI2310DS, KI3055, KI3055DY, KI3305DS, KI502DT, KI7N10DY, KI8810DS

Keywords - KI1N60DS MOSFET specs

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