All MOSFET. KX10N60F Datasheet

 

KX10N60F Datasheet and Replacement


   Type Designator: KX10N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO220F
 

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KX10N60F Datasheet (PDF)

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KX10N60F

DIP Type MOSFETN-Channel MOSFETKX10N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 10 A (VGS = 10V)0.202.76 RDS(ON) 730m (VGS = 10V)1 2 3 Qg(typ.)= 29.5nC1.47max0.200.50D0.200.802.54typ2.54typGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

Datasheet: KI2310DS , KI3055 , KI3055DY , KI3305DS , KI502DT , KI7N10DY , KI8810DS , KO3400 , RU6888R , KX120N06 , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , KX6N70 , KX6N70F , KX6N80F .

Keywords - KX10N60F MOSFET datasheet

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