KX10N60F PDF and Equivalents Search

 

KX10N60F Specs and Replacement

Type Designator: KX10N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO220F

KX10N60F substitution

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KX10N60F datasheet

 ..1. Size:1596K  kexin
 kx10n60f.pdf pdf_icon

KX10N60F

DIP Type MOSFET N-Channel MOSFET KX10N60F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 600V ID = 10 A (VGS = 10V) 0.20 2.76 RDS(ON) 730m (VGS = 10V) 1 2 3 Qg(typ.)= 29.5nC 1.47max 0.20 0.50 D 0.20 0.80 2.54typ 2.54typ G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou... See More ⇒

Detailed specifications: KI2310DS, KI3055, KI3055DY, KI3305DS, KI502DT, KI7N10DY, KI8810DS, KO3400, AO3400A, KX120N06, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70, KX6N70F, KX6N80F

Keywords - KX10N60F MOSFET specs

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