All MOSFET. KX120N06 Datasheet

 

KX120N06 Datasheet and Replacement


   Type Designator: KX120N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220
 

 KX120N06 substitution

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KX120N06 Datasheet (PDF)

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KX120N06

DIP Type MOSFETN-Channel MOSFETKX120N06TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 60V ID = 100 A (VGS = 10V) RDS(ON) 6.5m (VGS = 10V) Special process technology for high ESD capability Fully characterized Avalanche voltage and current1.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50

Datasheet: KI3055 , KI3055DY , KI3305DS , KI502DT , KI7N10DY , KI8810DS , KO3400 , KX10N60F , IRFZ46N , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , KX8N60C .

Keywords - KX120N06 MOSFET datasheet

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