All MOSFET. KX120N06 Datasheet

 

KX120N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KX120N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220

 KX120N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KX120N06 Datasheet (PDF)

 ..1. Size:1520K  kexin
 kx120n06.pdf

KX120N06 KX120N06

DIP Type MOSFETN-Channel MOSFETKX120N06TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 60V ID = 100 A (VGS = 10V) RDS(ON) 6.5m (VGS = 10V) Special process technology for high ESD capability Fully characterized Avalanche voltage and current1.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50

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