KX120N06 Specs and Replacement
Type Designator: KX120N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO220
KX120N06 substitution
- MOSFET ⓘ Cross-Reference Search
KX120N06 datasheet
kx120n06.pdf
DIP Type MOSFET N-Channel MOSFET KX120N06 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 60V ID = 100 A (VGS = 10V) RDS(ON) 6.5m (VGS = 10V) Special process technology for high ESD capability Fully characterized Avalanche voltage and current 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 ... See More ⇒
Detailed specifications: KI3055, KI3055DY, KI3305DS, KI502DT, KI7N10DY, KI8810DS, KO3400, KX10N60F, IRFB31N20D, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70, KX6N70F, KX6N80F, KX8N60C
Keywords - KX120N06 MOSFET specs
KX120N06 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AO3419L | 2SK4201-S19-AY
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