All MOSFET. KX1N60DS Datasheet

 

KX1N60DS Datasheet and Replacement


   Type Designator: KX1N60DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
   Package: SOT23
 

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KX1N60DS Datasheet (PDF)

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KX1N60DS

SMD Type MOSFETN-Channel Power MOSFET KX1N60DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features ESD improved capability1 2 Depletion mode+0.02+0.10.15 -0.020.95 -0.1 dv/dt rated +0.11.9 -0.2 Pb-free lead plating;ROHS compliant Halogen Free1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

Datasheet: KI3305DS , KI502DT , KI7N10DY , KI8810DS , KO3400 , KX10N60F , KX120N06 , KX12N65F , NCEP15T14 , KX3N80 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F .

History: SML20J122 | IRL3103D2PBF

Keywords - KX1N60DS MOSFET datasheet

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