All MOSFET. KX1N60DS Datasheet

 

KX1N60DS Datasheet and Replacement


   Type Designator: KX1N60DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
   Package: SOT23
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KX1N60DS Datasheet (PDF)

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KX1N60DS

SMD Type MOSFETN-Channel Power MOSFET KX1N60DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features ESD improved capability1 2 Depletion mode+0.02+0.10.15 -0.020.95 -0.1 dv/dt rated +0.11.9 -0.2 Pb-free lead plating;ROHS compliant Halogen Free1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SM6128NSK | SP8M24FRA | FDB110N15A | IXFP12N50P | MTD5P06V | STS3N95K3 | AP2761I-H-HF

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