KX1N60DS Specs and Replacement
Type Designator: KX1N60DS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55.8 nS
Cossⓘ - Output Capacitance: 4.53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
Package: SOT23
KX1N60DS substitution
- MOSFET ⓘ Cross-Reference Search
KX1N60DS datasheet
kx1n60ds.pdf
SMD Type MOSFET N-Channel Power MOSFET KX1N60DS SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features ESD improved capability 1 2 Depletion mode +0.02 +0.1 0.15 -0.02 0.95 -0.1 dv/dt rated +0.1 1.9 -0.2 Pb-free lead plating;ROHS compliant Halogen Free 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra... See More ⇒
Detailed specifications: KI3305DS, KI502DT, KI7N10DY, KI8810DS, KO3400, KX10N60F, KX120N06, KX12N65F, IRF1405, KX3N80, KX4N60F, KX6N70, KX6N70F, KX6N80F, KX8N60C, KX8N60CF, KX8N60F
Keywords - KX1N60DS MOSFET specs
KX1N60DS cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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