KX3N80 PDF and Equivalents Search

 

KX3N80 Specs and Replacement

Type Designator: KX3N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 909 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220

KX3N80 substitution

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KX3N80 datasheet

 ..1. Size:3231K  kexin
 kx3n80.pdf pdf_icon

KX3N80

DIP Type MOSFET N-Channel MOSFET KX3N80 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 800V ID = 3 A (VGS = 10V) RDS(ON) 5 (VGS = 10V) D Low gate charge ( typical 15 nC) 1.27 0.10 1.52 0.10 2 1 3 Low Crss ( typical 7.0 pF) 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP ... See More ⇒

Detailed specifications: KI502DT , KI7N10DY , KI8810DS , KO3400 , KX10N60F , KX120N06 , KX12N65F , KX1N60DS , 7N60 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F , KX90N06 .

Keywords - KX3N80 MOSFET specs

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