KX3N80 Datasheet and Replacement
Type Designator: KX3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 909 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
KX3N80 substitution
KX3N80 Datasheet (PDF)
kx3n80.pdf
DIP Type MOSFETN-Channel MOSFETKX3N80TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 800V ID = 3 A (VGS = 10V) RDS(ON) 5 (VGS = 10V)D Low gate charge ( typical 15 nC) 1.27 0.10 1.52 0.1021 3 Low Crss ( typical 7.0 pF)0.80 0.10 +0.100.50 0.052.40 0.202.54TYP 2.54TYP
Datasheet: KI502DT , KI7N10DY , KI8810DS , KO3400 , KX10N60F , KX120N06 , KX12N65F , KX1N60DS , IRF830 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F , KX90N06 .
History: 2SK1412LS
Keywords - KX3N80 MOSFET datasheet
KX3N80 cross reference
KX3N80 equivalent finder
KX3N80 lookup
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History: 2SK1412LS
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