All MOSFET. KX4N60F Datasheet

 

KX4N60F Datasheet and Replacement


   Type Designator: KX4N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO220F
 

 KX4N60F substitution

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KX4N60F Datasheet (PDF)

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KX4N60F

DIP Type MOSFETN-Channel MOSFETKX4N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 2.4 A (VGS = 10V) RDS(ON) 2.5 (VGS = 10V)0.202.76D1.47max0.200.501 2 3G0.200.802.54typ2.54typS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V

Datasheet: KI7N10DY , KI8810DS , KO3400 , KX10N60F , KX120N06 , KX12N65F , KX1N60DS , KX3N80 , 60N06 , KX6N70 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F , KX90N06 , KXF3055 .

Keywords - KX4N60F MOSFET datasheet

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