KX4N60F PDF and Equivalents Search

 

KX4N60F Specs and Replacement

Type Designator: KX4N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO220F

KX4N60F substitution

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KX4N60F datasheet

 ..1. Size:1765K  kexin
 kx4n60f.pdf pdf_icon

KX4N60F

DIP Type MOSFET N-Channel MOSFET KX4N60F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 600V ID = 2.4 A (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) 0.20 2.76 D 1.47max 0.20 0.50 1 2 3 G 0.20 0.80 2.54typ 2.54typ S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V ... See More ⇒

Detailed specifications: KI7N10DY, KI8810DS, KO3400, KX10N60F, KX120N06, KX12N65F, KX1N60DS, KX3N80, IRFZ48N, KX6N70, KX6N70F, KX6N80F, KX8N60C, KX8N60CF, KX8N60F, KX90N06, KXF3055

Keywords - KX4N60F MOSFET specs

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