KX6N70 Datasheet and Replacement
Type Designator: KX6N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
KX6N70 substitution
KX6N70 Datasheet (PDF)
kx6n70.pdf

DIP Type MOSFETN-Channel Enhancement MOSFETKX6N70TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)D1.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20] [2.54 0.20]G
kx6n70f.pdf

DIP Type MOSFETN-Channel Enhancement MOSFETKX6N70FUnit: mmTO-220F0.200.200.202.54 Features0.200.70 VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)0.202.761.47max0.200.500.200.802.54typ2.54typ Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
Datasheet: KI8810DS , KO3400 , KX10N60F , KX120N06 , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , STP65NF06 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F , KX90N06 , KXF3055 , MCH6405 .
History: TN0200TS
Keywords - KX6N70 MOSFET datasheet
KX6N70 cross reference
KX6N70 equivalent finder
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KX6N70 substitution
KX6N70 replacement
History: TN0200TS



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