All MOSFET. KX6N80F Datasheet

 

KX6N80F Datasheet and Replacement


   Type Designator: KX6N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220F
 

 KX6N80F substitution

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KX6N80F Datasheet (PDF)

 ..1. Size:3400K  kexin
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KX6N80F

DIP Type MOSFETN-Channel MOSFETKX6N80FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 800V ID = 7 A (VGS = 10V) RDS(ON) 1.9 (VGS = 10V)0.202.76 Low Gate Charge (Typ. 27 nC)1.47max Fast switching 100% Avalanche Tested0.200.50D 0.200.802.54typ2.54typG S Absolute Maximum Rating

Datasheet: KX10N60F , KX120N06 , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , KX6N70 , KX6N70F , 60N06 , KX8N60C , KX8N60CF , KX8N60F , KX90N06 , KXF3055 , MCH6405 , NDT06N03 , NDT110N03 .

History: SI4431BDY

Keywords - KX6N80F MOSFET datasheet

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