KX6N80F Specs and Replacement
Type Designator: KX6N80F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO220F
KX6N80F substitution
- MOSFET ⓘ Cross-Reference Search
KX6N80F datasheet
kx6n80f.pdf
DIP Type MOSFET N-Channel MOSFET KX6N80F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 800V ID = 7 A (VGS = 10V) RDS(ON) 1.9 (VGS = 10V) 0.20 2.76 Low Gate Charge (Typ. 27 nC) 1.47max Fast switching 100% Avalanche Tested 0.20 0.50 D 0.20 0.80 2.54typ 2.54typ G S Absolute Maximum Rating... See More ⇒
Detailed specifications: KX10N60F, KX120N06, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70, KX6N70F, IRLB3034, KX8N60C, KX8N60CF, KX8N60F, KX90N06, KXF3055, MCH6405, NDT06N03, NDT110N03
Keywords - KX6N80F MOSFET specs
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