KX6N80F PDF and Equivalents Search

 

KX6N80F Specs and Replacement

Type Designator: KX6N80F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO220F

KX6N80F substitution

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KX6N80F datasheet

 ..1. Size:3400K  kexin
kx6n80f.pdf pdf_icon

KX6N80F

DIP Type MOSFET N-Channel MOSFET KX6N80F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 800V ID = 7 A (VGS = 10V) RDS(ON) 1.9 (VGS = 10V) 0.20 2.76 Low Gate Charge (Typ. 27 nC) 1.47max Fast switching 100% Avalanche Tested 0.20 0.50 D 0.20 0.80 2.54typ 2.54typ G S Absolute Maximum Rating... See More ⇒

Detailed specifications: KX10N60F, KX120N06, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70, KX6N70F, IRLB3034, KX8N60C, KX8N60CF, KX8N60F, KX90N06, KXF3055, MCH6405, NDT06N03, NDT110N03

Keywords - KX6N80F MOSFET specs

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