All MOSFET. KX90N06 Datasheet

 

KX90N06 Datasheet and Replacement


   Type Designator: KX90N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 396 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO220
 

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KX90N06 Datasheet (PDF)

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KX90N06

DIP Type MOSFETN-Channel MOSFETKX90N06TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 70V ID = 80 A (VGS = 10V) RDS(ON) 7.2m (VGS = 10V) Ultra Low On-Resistance1.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.052.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1 GATE2 DR

Datasheet: KX3N80 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , KX8N60C , KX8N60CF , KX8N60F , IRF9640 , KXF3055 , MCH6405 , NDT06N03 , NDT110N03 , NDT15N10 , NDT18N06 , NDT1N70 , NDT25N06 .

History: NTD3808N-1G

Keywords - KX90N06 MOSFET datasheet

 KX90N06 cross reference
 KX90N06 equivalent finder
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