KX90N06 PDF and Equivalents Search

 

KX90N06 Specs and Replacement

Type Designator: KX90N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 396 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO220

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KX90N06 datasheet

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KX90N06

DIP Type MOSFET N-Channel MOSFET KX90N06 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 70V ID = 80 A (VGS = 10V) RDS(ON) 7.2m (VGS = 10V) Ultra Low On-Resistance 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1 GATE 2 DR... See More ⇒

Detailed specifications: KX3N80, KX4N60F, KX6N70, KX6N70F, KX6N80F, KX8N60C, KX8N60CF, KX8N60F, K2611, KXF3055, MCH6405, NDT06N03, NDT110N03, NDT15N10, NDT18N06, NDT1N70, NDT25N06

Keywords - KX90N06 MOSFET specs

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