All MOSFET. NDT06N03 Datasheet

 

NDT06N03 Datasheet and Replacement


   Type Designator: NDT06N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO252
 

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NDT06N03 Datasheet (PDF)

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NDT06N03

SMD Type MOSFETN-Channel MOSFETNDT06N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 30V ID = 60 A (VGS = 10V) RDS(ON) 4.1m (VGS = 10V)0.1270.80+0.1 max-0.1 RDS(ON) 5.9m (VGS = 4.5V)1 Gate+ 0.1D2 Drain2.3 0.60- 0.1+0.15 3 Source4.60 -0.154 DrainGS Absolute Ma

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF1902

Keywords - NDT06N03 MOSFET datasheet

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