NDT110N03 Specs and Replacement
Type Designator: NDT110N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
NDT110N03 substitution
- MOSFET ⓘ Cross-Reference Search
NDT110N03 datasheet
ndt110n03.pdf
SMD Type MOSFET N-Channel MOSFET NDT110N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V 4 ID = 110 A (VGS = 10V) RDS(ON) 4m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 6m (VGS = 4.5V) High Power and current handing capability + 0.1 Lead free product is acquired 2.3 0.60- 0... See More ⇒
Detailed specifications: KX6N80F, KX8N60C, KX8N60CF, KX8N60F, KX90N06, KXF3055, MCH6405, NDT06N03, AOD4184A, NDT15N10, NDT18N06, NDT1N70, NDT25N06, NDT2N60, NDT2N60P, NDT35N06, NDT4N20L
Keywords - NDT110N03 MOSFET specs
NDT110N03 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BR4N60 | SM3380EHQG | WML100N07TS | IRF9910 | BR75N08 | SM2215PSQG | KU056N03Q
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