NDT110N03 Datasheet and Replacement
Type Designator: NDT110N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
NDT110N03 substitution
NDT110N03 Datasheet (PDF)
ndt110n03.pdf
SMD Type MOSFETN-Channel MOSFETNDT110N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 VDS (V) = 30V4 ID = 110 A (VGS = 10V) RDS(ON) 4m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 6m (VGS = 4.5V) High Power and current handing capability+ 0.1 Lead free product is acquired2.3 0.60- 0
Datasheet: KX6N80F , KX8N60C , KX8N60CF , KX8N60F , KX90N06 , KXF3055 , MCH6405 , NDT06N03 , AO4468 , NDT15N10 , NDT18N06 , NDT1N70 , NDT25N06 , NDT2N60 , NDT2N60P , NDT35N06 , NDT4N20L .
History: SM1A28NSUB
Keywords - NDT110N03 MOSFET datasheet
NDT110N03 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SM1A28NSUB
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