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NDT1N70 Specs and Replacement

Type Designator: NDT1N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm

Package: TO252

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NDT1N70 datasheet

 ..1. Size:1482K  kexin
 ndt1n70.pdf pdf_icon

NDT1N70

SMD Type MOSFET N-Channel MOSFET NDT1N70 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 1.2 A (VGS = 10V) RDS(ON) 13.5 (VGS = 10V) 2.Drain 0.127 +0.1 0.80-0.1 Fast switching capability max + 0.1 1 Gate 2.3 0.60- 0.1 1.Gate +0.15 4 .60 -0.15 2 Drain 3 Source 3.Source Absolute... See More ⇒

Detailed specifications: KX8N60F, KX90N06, KXF3055, MCH6405, NDT06N03, NDT110N03, NDT15N10, NDT18N06, IRFP064N, NDT25N06, NDT2N60, NDT2N60P, NDT35N06, NDT4N20L, NDT4N60, NDT4N65, NDT4N65P

Keywords - NDT1N70 MOSFET specs

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