NDT2N60P PDF and Equivalents Search

 

NDT2N60P Specs and Replacement


   Type Designator: NDT2N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO251
 

 NDT2N60P substitution

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NDT2N60P datasheet

 ..1. Size:1619K  kexin
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NDT2N60P

DIP Type MOSFET N-Channel MOSFET NDT2N60P Unit mm TO-251 6.50 0.15 2.30 0.10 5.30 0.10 0.58 (max) 0.43 (min) Features VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V) 1 2 3 Low Gate Charge 0.80 0.10 Low Reverse transfer capacitances 0.60 0.10 0.58 (max) 2.30(typ) 0.43 (min) 4.60 0.10 1.20 0.15 Absolute Maximum Ratin... See More ⇒

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NDT2N60P

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Detailed specifications: MCH6405 , NDT06N03 , NDT110N03 , NDT15N10 , NDT18N06 , NDT1N70 , NDT25N06 , NDT2N60 , IRFZ44N , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , NDT50N03 , NDT5N70P .

History: SIHFU9220

Keywords - NDT2N60P MOSFET specs

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