All MOSFET. NDT4N65P Datasheet

 

NDT4N65P MOSFET. Datasheet pdf. Equivalent

Type Designator: NDT4N65P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 58 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO251

NDT4N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NDT4N65P Datasheet (PDF)

1.1. ndt4n65p.pdf Size:3389K _kexin

NDT4N65P
NDT4N65P

DIP Type MOSFET N-Channel Enhancement MOSFET NDT4N65P (KDT4N65P) ■ Features TO-251 ● VDS (V) = 650V ● ID = 3.0 A (VGS = 10V) ● RDS(ON) < 3Ω (VGS = 10V) D 1 2 3 G 1 3 2 S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 Ta=25℃ 3.0 Continuous Drain Current ID Ta=100

3.1. ndt4n65.pdf Size:3514K _kexin

NDT4N65P
NDT4N65P

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) ■ Features TO-252 Unit: mm ● VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ● ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 ● RDS(ON) < 3Ω (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE ■ Absolute Maximum Ratings Ta = 25℃ P

 4.1. ndt4n60.pdf Size:2528K _kexin

NDT4N65P
NDT4N65P

SMD Type MOSFET N-Channel MOSFET NDT4N60 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 600V ● ID = 3.9 A (VGS = 10V) ● RDS(ON) < 1.2Ω (VGS = 10V) 0.127 +0.1 ● Low effective output capacitance 0.80-0.1 max + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 2

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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