NDT5N70P MOSFET. Datasheet pdf. Equivalent
Type Designator: NDT5N70P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 112 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 23.3 nS
Drain-Source Capacitance (Cd): 8.8 pF
Maximum Drain-Source On-State Resistance (Rds): 1.48 Ohm
Package: TO251
NDT5N70P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDT5N70P Datasheet (PDF)
0.1. ndt5n70p.pdf 
Size:2590K _kexin
DIP Type MOSFET N-Channel Enhancement MOSFET NDT5N70P TO-251 ■ Features ● VDS (V) = 700V ● ID = 5.0 A (VGS = 10V) 1 2 3 ● RDS(ON) ＜ 1.8Ω (VGS = 10V) ● High Current, High Speed Switching D 1 3 2 G S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 Tc=25℃ 5.0 Cont
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