NDT5N70P Datasheet and Replacement
Type Designator: NDT5N70P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23.3 nS
Cossⓘ - Output Capacitance: 8.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.48 Ohm
Package: TO251
NDT5N70P substitution
NDT5N70P Datasheet (PDF)
ndt5n70p.pdf

DIP Type MOSFETN-Channel Enhancement MOSFETNDT5N70P TO-251 Features VDS (V) = 700V ID = 5.0 A (VGS = 10V)1 2 3 RDS(ON) 1.8 (VGS = 10V) High Current, High Speed SwitchingD1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 700V Gate-Source Voltage VGS 30 Tc=25 5.0 Cont
Datasheet: NDT2N60P , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , NDT50N03 , IRF640 , NDT6N60 , NDT6N60P , NDT6N65P , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 , NDT90N03 .
History: FML12N50ES | IRF7807D2
Keywords - NDT5N70P MOSFET datasheet
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History: FML12N50ES | IRF7807D2



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