NDT6N65P MOSFET Datasheet: N-Ch, 650V, 4.8A. Full specification with pinout and replacement list

NDT6N65P Specs and Replacement

   Type Designator: NDT6N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO251

NDT6N65P substitution

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NDT6N65P datasheet

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DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 Features VDS (V) = 650V 1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) D Low gate charge ( typical 16nC) 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou... See More ⇒

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DIP Type MOSFET N-Channel MOSFET NDT6N60P TO-251 Features VDS (V) = 600V 1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance 1 3 2 Drain Unit mm Gate Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage V... See More ⇒

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DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N70P TO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V) 1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) D 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou... See More ⇒