All MOSFET. NDT6N65P Datasheet

 

NDT6N65P MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDT6N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO251

 NDT6N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDT6N65P Datasheet (PDF)

Datasheet: NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , NDT50N03 , NDT5N70P , NDT6N60 , NDT6N60P , IRF1404 , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 , NDT90N03 , NDT90N04 , NFT1N60 , NTD100N02 .

 

 
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