NDT6N65P - параметры транзистора MOSFET, его аналоги, datasheet

NDT6N65P Datasheet (PDF)

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ndt6n65p.pdf pdf_icon

DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N65PTO-251 Features VDS (V) = 650V1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D Low gate charge ( typical 16nC)1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 650V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou

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ndt6n60p.pdf pdf_icon

DIP Type MOSFETN-Channel MOSFETNDT6N60PTO-251 Features VDS (V) = 600V1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance1 32DrainUnit: mmGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage V

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ndt6n60.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFETNDT6N60 TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 6 A (VGS = 10V) RDS(ON) 1.7 (VGS = 10V) 0.1270.80+0.1 max-0.1 Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.153 Source4 Drain

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ndt6n70p.pdf pdf_icon

DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N70PTO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V)1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)D1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 700V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou