NDT70N06 PDF and Equivalents Search

 

NDT70N06 Specs and Replacement

Type Designator: NDT70N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: TO252

NDT70N06 substitution

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NDT70N06 datasheet

 ..1. Size:532K  kexin
 ndt70n06.pdf pdf_icon

NDT70N06

SMD Type MOSFET Transistors N-Channel Trench Power MOSFET NDT70N06 TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 VDS = 60V; ID = 88A +0.2 5.30-0.2 +0.8 0.50 -0.7 RDS(ON) 6.6m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test 0.127 +0.1 0.80-0.1 max + 0.1 1Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2Drain 3Source Absolute Maximum Ratings Ta = ... See More ⇒

 7.1. Size:1184K  kexin
 ndt70n03.pdf pdf_icon

NDT70N06

SMD Type MOSFET N-Channel MOSFET NDT70N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V ID = 33A (VGS = 10V) RDS(ON) 4.3m (VGS = 10V) D 0.127 +0.1 0.80-0.1 RDS(ON) 6.5m (VGS = 4.5V) max + 0.1 1 Gate 2.3 0.60- 0.1 G +0.15 4.60 -0.15 2 Drain 3 Source S Absolute Maximum Ratings... See More ⇒

Detailed specifications: NDT50N03, NDT5N70P, NDT6N60, NDT6N60P, NDT6N65P, NDT6N70, NDT6N70P, NDT70N03, IRFP260N, NDT90N03, NDT90N04, NFT1N60, NTD100N02, NTD6N15, SI2306DS, SI2308DS, SI2312DS

Keywords - NDT70N06 MOSFET specs

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