NDT90N04 MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

NDT90N04 Specs and Replacement

Type Designator: NDT90N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 141 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 985 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

NDT90N04 substitution

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NDT90N04 datasheet

..1. Size:202K kexin
ndt90n04.pdf pdf_icon

SMD Type MOSFET Transistors N-Channel Trench Power MOSFET NDT90N04 TO-252 Unit mm Features VDS = 40V; ID = 120A +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 RDS(ON) 3.5m (VGS = 10V) Ultra Low On-Resistance High UIS and UIS 100% Test 0.127 +0.1 0.80-0.1 max + 0.1 1Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2Drain 3Source Absolute Maximum Ratings Ta ... See More ⇒

7.1. Size:1904K kexin
ndt90n03.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET NDT90N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V 4 ID = 85 A (VGS = 10V) RDS(ON) 5m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 8m (VGS = 4.5V) High Power and current handing capability Lead free product is acquired + 0.1 2.3 0.60- 0.... See More ⇒

Detailed specifications: NDT6N60, NDT6N60P, NDT6N65P, NDT6N70, NDT6N70P, NDT70N03, NDT70N06, NDT90N03, IRFB4227, NFT1N60, NTD100N02, NTD6N15, SI2306DS, SI2308DS, SI2312DS, SI2314EDS, SI2318CDS