All MOSFET. NFT1N60 Datasheet

 

NFT1N60 Datasheet and Replacement


   Type Designator: NFT1N60
   Marking Code: 1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.1 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.9 Ohm
   Package: SOT223
 

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NFT1N60 Datasheet (PDF)

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NFT1N60

SMD Type MOSFETN-Channel MOSFETNFT1N60Unit:mmSOT-2236.500.23.000.14 Features VDS (V) = 600V ID = 0.4 A (VGS = 10V)1 2 3 RDS(ON) 7.9 (VGS = 10V) High switching speed0.2502.30 (typ)0.84 (max)Gauge Plane Improved dv/dt capability0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25

Datasheet: NDT6N60P , NDT6N65P , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 , NDT90N03 , NDT90N04 , P55NF06 , NTD100N02 , NTD6N15 , SI2306DS , SI2308DS , SI2312DS , SI2314EDS , SI2318CDS , SI2318DS .

History: SJMN600R65CF

Keywords - NFT1N60 MOSFET datasheet

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