NFT1N60 PDF and Equivalents Search

 

NFT1N60 Specs and Replacement

Type Designator: NFT1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.9 Ohm

Package: SOT223

NFT1N60 substitution

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NFT1N60 datasheet

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NFT1N60

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Detailed specifications: NDT6N60P, NDT6N65P, NDT6N70, NDT6N70P, NDT70N03, NDT70N06, NDT90N03, NDT90N04, IRF3710, NTD100N02, NTD6N15, SI2306DS, SI2308DS, SI2312DS, SI2314EDS, SI2318CDS, SI2318DS

Keywords - NFT1N60 MOSFET specs

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