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NTD6N15 Specs and Replacement

Type Designator: NTD6N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO252

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NTD6N15 datasheet

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NTD6N15

SMD Type MOSFET N-Channel MOSFET NTD6N15 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) = 150V ID = 6 A (VGS = 10V) 0.127 RDS(ON) 300m (VGS = 10V) +0.1 0.80-0.1 max Silicon Gate for Fast Switching Speeds Low Drive Requirement 1 Gate 2.3 0.60+ 0.1 - 0.1 2 Drain +0.15 4.60 -0.15 D 3 S... See More ⇒

Detailed specifications: NDT6N70, NDT6N70P, NDT70N03, NDT70N06, NDT90N03, NDT90N04, NFT1N60, NTD100N02, AON6414A, SI2306DS, SI2308DS, SI2312DS, SI2314EDS, SI2318CDS, SI2318DS, SI2324DS, SI2328DS

Keywords - NTD6N15 MOSFET specs

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