NTD6N15 Datasheet and Replacement
Type Designator: NTD6N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
NTD6N15 substitution
NTD6N15 Datasheet (PDF)
ntd6n15.pdf
SMD Type MOSFETN-Channel MOSFETNTD6N15TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) = 150V ID = 6 A (VGS = 10V)0.127 RDS(ON) 300m (VGS = 10V)+0.10.80-0.1max Silicon Gate for Fast Switching Speeds Low Drive Requirement 1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.15D3 S
Datasheet: NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 , NDT90N03 , NDT90N04 , NFT1N60 , NTD100N02 , P55NF06 , SI2306DS , SI2308DS , SI2312DS , SI2314EDS , SI2318CDS , SI2318DS , SI2324DS , SI2328DS .
Keywords - NTD6N15 MOSFET datasheet
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