All MOSFET. NTD6N15 Datasheet

 

NTD6N15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD6N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

 NTD6N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD6N15 Datasheet (PDF)

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 ntd6n15.pdf

NTD6N15 NTD6N15

SMD Type MOSFETN-Channel MOSFETNTD6N15TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) = 150V ID = 6 A (VGS = 10V)0.127 RDS(ON) 300m (VGS = 10V)+0.10.80-0.1max Silicon Gate for Fast Switching Speeds Low Drive Requirement 1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.15D3 S

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SE3080K | IRFP9140N

 

 
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