SI2314EDS PDF and Equivalents Search

 

SI2314EDS Specs and Replacement

Type Designator: SI2314EDS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT23

SI2314EDS substitution

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SI2314EDS datasheet

 ..1. Size:89K  vishay
si2314eds.pdf pdf_icon

SI2314EDS

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D ESD Protected 3000 V D RoHS Compliant Pb-free 0.033 @ VGS = 4.5 V 4.9 Available APPLICATIONS 0.040 @ VGS = 2.5 V 4.4 20 0.051 @ VGS = 1.8 V 3.9 D LI-lon Battery Protection D TO-236 (SOT-23) G 1 3 D 3 kW G S 2 Top View Si2314EDS (C4)* S... See More ⇒

 ..2. Size:1833K  kexin
si2314eds.pdf pdf_icon

SI2314EDS

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) = 20V 3 ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) 1 2 D +0.1 +0.05 RDS(ON) 51m (VGS = 1.8V) 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 G 1 3 k 1.Gate G 3 D 2.Source 3.Drai... See More ⇒

 ..3. Size:907K  cn vbsemi
si2314eds.pdf pdf_icon

SI2314EDS

SI2314EDS www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conv... See More ⇒

 0.1. Size:1833K  kexin
si2314eds-3.pdf pdf_icon

SI2314EDS

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4-0.1 3 VDS (V) = 20V ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 51m (VGS = 1.8V) +0.1 1.9 -0.2 3 k G G 1 1. Gate 2. Source 3 D 3.... See More ⇒

Detailed specifications: NDT90N03, NDT90N04, NFT1N60, NTD100N02, NTD6N15, SI2306DS, SI2308DS, SI2312DS, 8205A, SI2318CDS, SI2318DS, SI2324DS, SI2328DS, SI2356DS, SI2366DS, SI2372DS, SI4056DY

Keywords - SI2314EDS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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