All MOSFET. SI4490DY Datasheet

 

SI4490DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4490DY
   Marking Code: 4490
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 20 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8

 SI4490DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4490DY Datasheet (PDF)

 ..1. Size:225K  vishay
 si4490dy.pdf

SI4490DY SI4490DY

Si4490DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = 10 V 4.0 TrenchFET Power MOSFETs2000.090 at VGS = 6.0 V 3.8 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D G2 7S D3 6G D4 5Top ViewSOrdering Information:

 ..2. Size:1475K  kexin
 si4490dy.pdf

SI4490DY SI4490DY

SMD Type MOSFETN-Channel MOSFETSI4490DY (KI4490DY)SOP-8 Features VDS (V) = 200VD ID = 4A (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 10V) RDS(ON) 90m (VGS = 6V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol 10S Steady State Unit Drain-Source Voltage VDS 200

 9.1. Size:225K  vishay
 si4493dy.pdf

SI4490DY SI4490DY

Si4493DYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.00775 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET - 200.01225 at VGS = - 2.5 V - 11 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSSO-8 S 1 8 D GS D 2 7 S D

 9.2. Size:122K  vishay
 si4497dy.pdf

SI4490DY SI4490DY

New ProductSi4497DYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = - 10 V - 36 TrenchFET Power MOSFET- 30 90 nC 100 % Rg Tested0.0046 at VGS = - 4.5 V - 29 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATI

 9.3. Size:293K  vishay
 si4491edy.pdf

SI4490DY SI4490DY

New ProductSi4491EDYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 29 TrenchFET Power MOSFET- 30 0.0082 at VGS = - 6 V - 23 66 nC 100 % Rg and UIS Tested0.0112 at VGS = - 4.5 V - 20

 9.4. Size:64K  vishay
 si4496dy.pdf

SI4490DY SI4490DY

Si4496DYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETD Low Gate ChargePRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.025 @ VGS = 10 V 7.7 D Primary Side Switch1001000.031 @ VGS = 6.0 V 6.9DSO-8SD1 8SD2 7SD3 6GGD4 5Top ViewOrdering Information: Si4496DYSSi4496DY-T1 (with Tape and Reel)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HUFA75321D3S

 

 
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