All MOSFET. SI4490DY Datasheet

 

SI4490DY MOSFET. Datasheet pdf. Equivalent

Type Designator: SI4490DY

SMD Transistor Code: 4490

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: SOP8

SI4490DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI4490DY Datasheet (PDF)

1.1. si4490dy.pdf Size:225K _vishay

SI4490DY
SI4490DY

Si4490DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.080 at VGS = 10 V 4.0 TrenchFET Power MOSFETs 200 0.090 at VGS = 6.0 V 3.8 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D G 2 7 S D 3 6 G D 4 5 Top View S Ordering Information: Si4490DY-T1

1.2. si4490dy.pdf Size:1475K _kexin

SI4490DY
SI4490DY

SMD Type MOSFET N-Channel MOSFET SI4490DY (KI4490DY) SOP-8 ■ Features ● VDS (V) = 200V D ● ID = 4A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 80mΩ (VGS = 10V) ● RDS(ON) < 90mΩ (VGS = 6V) G 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10S Steady State Unit Drain-Source Voltage VDS 200

 5.1. si4493dy.pdf Size:225K _vishay

SI4490DY
SI4490DY

Si4493DY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.00775 at VGS = - 4.5 V - 14 • TrenchFET® Power MOSFET - 20 0.01225 at VGS = - 2.5 V - 11 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch S SO-8 S 1 8 D G S D 2 7 S D

5.2. si4491edy.pdf Size:293K _vishay

SI4490DY
SI4490DY

New Product Si4491EDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Extended VGS range (± 25 V) for adaptor switch VDS (V) RDS(on) () Max. applications ID a Qg (Typ.) • Extremely low RDS(on) 0.0065 at VGS = - 10 V - 29 • TrenchFET® Power MOSFET - 30 0.0082 at VGS = - 6 V - 23 66 nC • 100 % Rg and UIS Tested 0.0112 at VGS = - 4.5 V - 20

 5.3. si4496dy.pdf Size:64K _vishay

SI4490DY
SI4490DY

Si4496DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.025 @ VGS = 10 V 7.7 D Primary Side Switch 100 100 0.031 @ VGS = 6.0 V 6.9 D SO-8 SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View Ordering Information: Si4496DY S Si4496DY-T1 (with Tape and Reel) N

5.4. si4497dy.pdf Size:122K _vishay

SI4490DY
SI4490DY

New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition 0.0033 at VGS = - 10 V - 36 • TrenchFET® Power MOSFET - 30 90 nC • 100 % Rg Tested 0.0046 at VGS = - 4.5 V - 29 • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATI

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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