SM4850NSK Datasheet and Replacement
Type Designator: SM4850NSK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
SM4850NSK substitution
SM4850NSK Datasheet (PDF)
sm4850nsk.pdf

SM4850NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/8A,DD RDS(ON)= 20m (max.) @ VGS= 10V RDS(ON)= 28m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant) 100% UIS Tested( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Equipmen
gsm4850ws.pdf

GSM4850WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/7.2A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: SM4832NSK , SM4834NSK , SM4836NSK , SM4838NSK , SM4839NSK , SM4842NSK , SM4843NSK , SM4844NHK , K2611 , SM6002NAF , SM6009NSF , SM6012NSK , SM6130NSUB , SM6A10NSU , SM6A17NSFP , SM6A22NSF , SM6A22NSFP .
History: SPA15N60C3 | P3606BEA | AOK040A60 | UPA1913 | VBJ1201K | SL4614 | SVS7N60DD2TR
Keywords - SM4850NSK MOSFET datasheet
SM4850NSK cross reference
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History: SPA15N60C3 | P3606BEA | AOK040A60 | UPA1913 | VBJ1201K | SL4614 | SVS7N60DD2TR



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