All MOSFET. IRF7324D1 Datasheet

 

IRF7324D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7324D1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7(min) V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SO8

 IRF7324D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7324D1 Datasheet (PDF)

 ..1. Size:134K  international rectifier
 irf7324d1pbf.pdf

IRF7324D1 IRF7324D1

PD-95309AIRF7324D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l Ideal for Mobile Phone Applications A Kl Generation V Technology3 6S DRDS(on) = 0.27l SO-8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer

 ..2. Size:210K  international rectifier
 irf7324d1.pdf

IRF7324D1 IRF7324D1

PD- 91789IRF7324D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal for Mobile Phone Applications A K Generation V Technology3 6S DRDS(on) = 0.18 SO-8 Footprint45G DSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottk

 7.1. Size:185K  international rectifier
 irf7324pbf-1.pdf

IRF7324D1 IRF7324D1

IRF7324TRPbF-1HEXFET Power MOSFETVDS -20 V1 8RDS(on) max S1 D10.018 2 7(@V = -4.5V)GSG1 D1Qg (typical) 42 nC3 6S2 D2ID 4 5-9.0 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

 7.2. Size:99K  international rectifier
 irf7324.pdf

IRF7324D1 IRF7324D1

PD -93799AIRF7324HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

 7.3. Size:164K  infineon
 irf7324pbf.pdf

IRF7324D1 IRF7324D1

PD - 95460IRF7324PbFHEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

 7.4. Size:1183K  cn vbsemi
 irf7324tr.pdf

IRF7324D1 IRF7324D1

IRF7324TRwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF540N , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 .

 

 
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