SM2308NSA Specs and Replacement
Type Designator: SM2308NSA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.7 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT23
SM2308NSA substitution
- MOSFET ⓘ Cross-Reference Search
SM2308NSA datasheet
sm2308nsa.pdf
SM2308NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.2A , D RDS(ON)= 35m (max.) @ VGS=10V S RDS(ON)= 45m (max.) @ VGS=4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection G Applications Load Switch. DC-DC converter. S Power Management Function. N-Channel ... See More ⇒
tsm2308cx.pdf
TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information ... See More ⇒
gsm2308a.pdf
GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒
Detailed specifications: SM7518NSU, SM7575NSF, SM7580NSF, SM2300NSA, SM2300NSAN, SM2302NSA, SM2304NSA, SM2306NSA, IRFP250N, SM2310NSA, SM2312NSA, SM2314NSA, SM2316NSA, SM2318NSA, SM3024NSF, SM3024NSU, SM3054NSU
Keywords - SM2308NSA MOSFET specs
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