SM2308NSA - параметры транзистора MOSFET, его аналоги, datasheet

SM2308NSA Datasheet (PDF)

..1. Size:262K sino
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SM2308NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.2A ,D RDS(ON)= 35m (max.) @ VGS=10VS RDS(ON)= 45m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant) D ESD ProtectionGApplications Load Switch. DC-DC converter.S Power Management Function.N-Channel

8.1. Size:370K taiwansemi
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TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information

8.2. Size:813K globaltech semi
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GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.3. Size:760K globaltech semi
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GSM2308 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Другие MOSFET... SM7518NSU , SM7575NSF , SM7580NSF , SM2300NSA , SM2300NSAN , SM2302NSA , SM2304NSA , SM2306NSA , AON7408 , SM2310NSA , SM2312NSA , SM2314NSA , SM2316NSA , SM2318NSA , SM3024NSF , SM3024NSU , SM3054NSU .