All MOSFET. SM4391NSKP Datasheet

 

SM4391NSKP Datasheet and Replacement


   Type Designator: SM4391NSKP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 124.99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 70 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: DFN5X6-8
 

 SM4391NSKP substitution

   - MOSFET ⓘ Cross-Reference Search

 

SM4391NSKP Datasheet (PDF)

 ..1. Size:294K  sino
 sm4391nskp.pdf pdf_icon

SM4391NSKP

SM4391NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/100A, DDDRDS(ON)= 1.25m (max.) @ VGS=10V RDS(ON)= 1.7m (max.) @ VGS=4.5VGS Pin 1 Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDD 100% UIS TestedApplications(4) G OR-ing Synchronous Rectifier for Server Battery Charger and

 9.1. Size:203K  taiwansemi
 tsm4392cs.pdf pdf_icon

SM4391NSKP

Preliminary TSM4392 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 11.5 @ VGS = 10V 12.5 4. Gate 30 16.5 @ VGS = 4.5V 10 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/

Datasheet: SM3023NSV , SM3116NAU , SM3116NSUC , SM4375NSKP , SM4377NSKP , SM4378NSKP , SM4383NSKP , SM4387NSKP , CS150N03A8 , SM4502NHKP , SM4503NHKP , SM4504NHKP , SM4506NHKP , SM2203NSQG , SM2204NSQG , SM2206NSQG , SM2208NSQG .

Keywords - SM4391NSKP MOSFET datasheet

 SM4391NSKP cross reference
 SM4391NSKP equivalent finder
 SM4391NSKP lookup
 SM4391NSKP substitution
 SM4391NSKP replacement

 

 
Back to Top

 


 
.