All MOSFET. SM2260NSQG Datasheet

 

SM2260NSQG Datasheet and Replacement


   Type Designator: SM2260NSQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: DFN2X2A-6
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SM2260NSQG Datasheet (PDF)

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SM2260NSQG

SM2260NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 60V/5.2A,DDRDS(ON) = 48m(max.) @ VGS =10VRDS(ON) = 59m(max.) @ VGS =4.5V SGPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DDDD 100% UIS TestedApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOr

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOI4286 | HGW130N12S | DAMH50N500H | BLF7G21L-160P | HP16N10 | ELM58822SA | 2SK4198LS

Keywords - SM2260NSQG MOSFET datasheet

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