SM2260NSQG Datasheet and Replacement
Type Designator: SM2260NSQG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DFN2X2A-6
SM2260NSQG substitution
SM2260NSQG Datasheet (PDF)
sm2260nsqg.pdf
SM2260NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 60V/5.2A,DDRDS(ON) = 48m(max.) @ VGS =10VRDS(ON) = 59m(max.) @ VGS =4.5V SGPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DDDD 100% UIS TestedApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOr
Datasheet: SM4504NHKP , SM4506NHKP , SM2203NSQG , SM2204NSQG , SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , IRF9640 , SM2290NSQG , SM2320NSA , SM2326NSAN , SM2360NSA , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN .
History: SM2206NSQG | HY1915B
Keywords - SM2260NSQG MOSFET datasheet
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SM2260NSQG replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: SM2206NSQG | HY1915B
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