SM2660NSC Datasheet and Replacement
Type Designator: SM2660NSC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23-6
SM2660NSC substitution
SM2660NSC Datasheet (PDF)
sm2660nsc.pdf

SM2660NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,SDRDS(ON)= 48m(max.) @ VGS=10VDGRDS(ON)= 59m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOrdering and Marking Informa
Datasheet: SM2501NSU , SM2518NSUC , SM2518NUB , SM2558NUB , SM2604NSC , SM2608NSC , SM2610NSC , SM2612NSC , IRFP064N , SM2670NSC , SM2690NSC , SM2692NSC , SM2A11NSF , SM2A12NSF , SM2A12NSKP , SM2A12NSU , SM2A16NSF .
History: FDV303N
Keywords - SM2660NSC MOSFET datasheet
SM2660NSC cross reference
SM2660NSC equivalent finder
SM2660NSC lookup
SM2660NSC substitution
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History: FDV303N



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