SM2660NSC Specs and Replacement
Type Designator: SM2660NSC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23-6
SM2660NSC substitution
- MOSFET ⓘ Cross-Reference Search
SM2660NSC datasheet
sm2660nsc.pdf
SM2660NSC N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, S D RDS(ON)= 48m (max.) @ VGS=10V D G RDS(ON)= 59m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications (3)G High frequency DC-DC converters. (4)S N-Channel MOSFET Ordering and Marking Informa... See More ⇒
Detailed specifications: SM2501NSU, SM2518NSUC, SM2518NUB, SM2558NUB, SM2604NSC, SM2608NSC, SM2610NSC, SM2612NSC, AO4468, SM2670NSC, SM2690NSC, SM2692NSC, SM2A11NSF, SM2A12NSF, SM2A12NSKP, SM2A12NSU, SM2A16NSF
Keywords - SM2660NSC MOSFET specs
SM2660NSC cross reference
SM2660NSC equivalent finder
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History: AP4526AGH-HF | NCE3035G | FTP18N06 | AGM612MN | SMK1265F | LPM8205B6F | AP4955GM
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