SM2A27NSFP Datasheet and Replacement
Type Designator: SM2A27NSFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 3.6 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: TO220FP
SM2A27NSFP substitution
SM2A27NSFP Datasheet (PDF)
sm2a27nsfp.pdf

SM2A27NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/4A,RDS(ON)= 660m (Max.) @ VGS=10VRDS(ON)= 740m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices Available(RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Mark
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - SM2A27NSFP MOSFET datasheet
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History: IRFW510A | IRL530NS



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