IRF743 Datasheet and Replacement
Type Designator: IRF743
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 8.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 63(max) nC
tr ⓘ - Rise Time: 15(max) nS
Cossⓘ - Output Capacitance: 450(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
IRF743 substitution
IRF743 Datasheet (PDF)
irf7433pbf.pdf

PD - 95305IRF7433PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7Al Surface Mount30m@VGS = -2.5V -7.4Al Available in Tape & Reel46m@VGS = -1.8V -6.3Al Lead-FreeDescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve
irf7434.pdf

PD - 9.1709IRF7343PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 55V -55V3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifie
irf7433.pdf

PD -94056IRF7433HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 24m@VGS = -4.5V -8.7A Surface Mount30m@VGS = -2.5V -7.4A Available in Tape & Reel46m@VGS = -1.8V -6.3ADescriptionA1 8S DThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques to 2 7S Dachieve the extremely low on-
Datasheet: IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , 12N60 , IRF744 , NCEP85T16D , NCEP85T25D , NCEP85T25T , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 .
Keywords - IRF743 MOSFET datasheet
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