MXP65D7AQ Specs and Replacement
Type Designator: MXP65D7AQ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 142 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 610 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO3P
MXP65D7AQ substitution
- MOSFET ⓘ Cross-Reference Search
MXP65D7AQ datasheet
mxp65d7at-aq.pdf
MXP65D7AT MXP65D7AQ 60V N-Channel MOSFET Applications High Speed Power Switching VDS RDS(ON)(MAX) ID Hard Switched and High Frequency Circuits 60V 5.7m 142A Uninterruptible Power Supply TO-220 TO-3P Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Ruggedness Pin Definition an... See More ⇒
Detailed specifications: MXP1006AT, MXP1007AT, MXP1008AT, MXP1015AT, MXP43P9AD, MXP43P9AE, MXP43P9AF, MXP43P9AT, IRF3710, MXP65D7AT, MXP8004AT, MXP84D7AT, MXP4002AE, MXP4002AF, MXP4002AT, MXP4003CTS, MXP4004AT
Keywords - MXP65D7AQ MOSFET specs
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