All MOSFET. MXP65D7AQ Datasheet

 

MXP65D7AQ Datasheet and Replacement


   Type Designator: MXP65D7AQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 142 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO3P
 

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MXP65D7AQ Datasheet (PDF)

 6.1. Size:323K  maxpower
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MXP65D7AQ

MXP65D7ATMXP65D7AQ60V N-Channel MOSFETApplications: High Speed Power Switching VDS RDS(ON)(MAX) ID Hard Switched and High Frequency Circuits 60V 5.7m 142A Uninterruptible Power SupplyTO-220 TO-3PFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessPin Definition an

Datasheet: MXP1006AT , MXP1007AT , MXP1008AT , MXP1015AT , MXP43P9AD , MXP43P9AE , MXP43P9AF , MXP43P9AT , P55NF06 , MXP65D7AT , MXP8004AT , MXP84D7AT , MXP4002AE , MXP4002AF , MXP4002AT , MXP4003CTS , MXP4004AT .

History: AM6923P | RTR040N03TL | RTQ035N03FRA | PSMNR70-30YLH | APT7F120S | H7N0608LD | IPD090N03L

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