All MOSFET. MXP65D7AQ Datasheet

 

MXP65D7AQ Datasheet and Replacement


   Type Designator: MXP65D7AQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 142 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO3P
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MXP65D7AQ Datasheet (PDF)

 6.1. Size:323K  maxpower
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MXP65D7AQ

MXP65D7ATMXP65D7AQ60V N-Channel MOSFETApplications: High Speed Power Switching VDS RDS(ON)(MAX) ID Hard Switched and High Frequency Circuits 60V 5.7m 142A Uninterruptible Power SupplyTO-220 TO-3PFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessPin Definition an

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: WSF20P03 | IPG16N10S4L-61A | SVGP104R5NS | WST03P06 | SJMN380R65ZF | WMB053NV8HGS | IPD80R900P7

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