MXP8004AT MOSFET. Datasheet pdf. Equivalent
Type Designator: MXP8004AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 333 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 126 nS
Drain-Source Capacitance (Cd): 980 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO220
MXP8004AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MXP8004AT Datasheet (PDF)
0.1. mxp8004at.pdf 
Size:591K _maxpower
MXP8004AT 80V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 80V 4.0m 200A RDS(ON),typ.=3.0m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pac
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