MXP8004AT Datasheet and Replacement
Type Designator: MXP8004AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 126 nS
Cossⓘ - Output Capacitance: 980 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
- MOSFET Cross-Reference Search
MXP8004AT Datasheet (PDF)
mxp8004at.pdf

MXP8004AT 80V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 80V 4.0m 200A RDS(ON),typ.=3.0m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pac
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRL8113LPBF | 1N60 | WSD60N10GDN56 | ME2306DS-G | TTD35N02AV | SVS11N70MJD2 | 2SK646
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History: IRL8113LPBF | 1N60 | WSD60N10GDN56 | ME2306DS-G | TTD35N02AV | SVS11N70MJD2 | 2SK646



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