MXP6006DF Datasheet and Replacement
Type Designator: MXP6006DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 534 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
MXP6006DF substitution
MXP6006DF Datasheet (PDF)
mxp6006dt-df.pdf

MXP6006DT, MXP6006DF Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPTO-263TO-263 MXPM
mxp6006dt.pdf

MXP6006DT Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPAbsolute Maximum Ratings TC=25
mxp6006dp.pdf

MXP6006DP Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrderingPark Number Package BrandMXP6006DP Power SO-8 MXPAbsolute Maximum Ratings TC=25unless
Datasheet: MXP3007CT , MXP3007CD , MXP4005CT , MXP5504CT , MXP6004CTS , MXP6006CT , MXP6006DP , MXP6006DT , TK10A60D , APM9988QB , SM1501GSQH , SM1600DSCS , SM1660DSCS , SM1A23DSK , SM2630DSC , SM2A18DSK , SM3380EHQG .
History: VBMB1101M | KNP6165B | CEM2192 | NCE70T260T | SM6010PSU | AP65SL105AFS | TSM2N70CZ
Keywords - MXP6006DF MOSFET datasheet
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History: VBMB1101M | KNP6165B | CEM2192 | NCE70T260T | SM6010PSU | AP65SL105AFS | TSM2N70CZ



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