All MOSFET. SM1600DSCS Datasheet

 

SM1600DSCS Datasheet and Replacement


   Type Designator: SM1600DSCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.31 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT363
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SM1600DSCS Datasheet (PDF)

 ..1. Size:237K  sino
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SM1600DSCS

SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VG2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1S1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Load switch. High-speed line driver.(1)S1(4

 9.1. Size:62K  taiwansemi
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SM1600DSCS

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 5.5 @ VGS =10V 160 Features Block Diagram Advanced Trench Technology Low RDS(ON) 5.5m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFP251 | NDS0610 | RFK35N08 | SM2A18NSV | GFB70N03 | SVS70R900DE3TR | RK3055ETL

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