SM1600DSCS Specs and Replacement
Type Designator: SM1600DSCS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: SOT363
SM1600DSCS substitution
- MOSFET ⓘ Cross-Reference Search
SM1600DSCS datasheet
sm1600dscs.pdf
SM1660DSCS Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.26A, S2 RDS(ON)= 2.2 (max.) @ VGS=10V G2 D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 G1 S1 Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-363 (RoHS Compliant) (6)D1 (3)D2 ESD Protection (2) (5) Applications G1 G2 Load switch. High-speed line driver. (1)S1 (4... See More ⇒
tsm160n10cz.pdf
TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 5.5 @ VGS =10V 160 Features Block Diagram Advanced Trench Technology Low RDS(ON) 5.5m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing... See More ⇒
Detailed specifications: MXP5504CT, MXP6004CTS, MXP6006CT, MXP6006DP, MXP6006DT, MXP6006DF, APM9988QB, SM1501GSQH, 5N65, SM1660DSCS, SM1A23DSK, SM2630DSC, SM2A18DSK, SM3380EHQG, SM3381EHQG, SM9990DSQG, SM9992DSQG
Keywords - SM1600DSCS MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI9410BDY-T1
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