All MOSFET. SM1660DSCS Datasheet

 

SM1660DSCS Datasheet and Replacement


   Type Designator: SM1660DSCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOT363
 

 SM1660DSCS substitution

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SM1660DSCS Datasheet (PDF)

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SM1660DSCS

SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2G2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1 Reliable and RuggedS1 Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection : HBM=(+/-)1600V MM=(+/-)100V(2)(5)ApplicationsG1G2 Load switch. Hig

Datasheet: MXP6004CTS , MXP6006CT , MXP6006DP , MXP6006DT , MXP6006DF , APM9988QB , SM1501GSQH , SM1600DSCS , IRF530 , SM1A23DSK , SM2630DSC , SM2A18DSK , SM3380EHQG , SM3381EHQG , SM9990DSQG , SM9992DSQG , SM9994DSO .

History: AP9585GM | ELM34405AA | SSP65R260S2E | HSH250N10 | CS10N80P | KND8103A | IPS135N03LG

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