SM1660DSCS Specs and Replacement
Type Designator: SM1660DSCS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT363
SM1660DSCS substitution
- MOSFET ⓘ Cross-Reference Search
SM1660DSCS datasheet
sm1660dscs.pdf
SM1660DSCS Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2 G2 D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 G1 Reliable and Rugged S1 Lead Free and Green Devices Available Top View of SOT-363 (RoHS Compliant) (6)D1 (3)D2 ESD Protection HBM=(+/-)1600V MM=(+/-)100V (2) (5) Applications G1 G2 Load switch. Hig... See More ⇒
Detailed specifications: MXP6004CTS, MXP6006CT, MXP6006DP, MXP6006DT, MXP6006DF, APM9988QB, SM1501GSQH, SM1600DSCS, IRF1010E, SM1A23DSK, SM2630DSC, SM2A18DSK, SM3380EHQG, SM3381EHQG, SM9990DSQG, SM9992DSQG, SM9994DSO
Keywords - SM1660DSCS MOSFET specs
SM1660DSCS cross reference
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SM1660DSCS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK299 | VS6018AS | BRCS3401MC | AO4726 | 4N100G-TF1-T | SM6102PSF | 4N100G-TF2-T
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