SM1660DSCS MOSFET. Datasheet pdf. Equivalent
Type Designator: SM1660DSCS
Marking Code: M60*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.26 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT363
SM1660DSCS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM1660DSCS Datasheet (PDF)
..1. Size:237K sino
sm1660dscs.pdf
sm1660dscs.pdf
SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2G2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1 Reliable and RuggedS1 Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection : HBM=(+/-)1600V MM=(+/-)100V(2)(5)ApplicationsG1G2 Load switch. Hig
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