SM2630DSC PDF and Equivalents Search

 

SM2630DSC Specs and Replacement

Type Designator: SM2630DSC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: SOT23-6

SM2630DSC substitution

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SM2630DSC datasheet

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SM2630DSC

SM2630DSC Dual N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4A, D2 S1 RDS(ON)=39m (max.) @ VGS=10V D1 G2 RDS(ON)=68m (max.) @ VGS=4.5V S2 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (6)D1 (4)D2 (1) (3) Applications G1 G2 Power Management in Notebook Computer, Portable Equipment and Ba... See More ⇒

Detailed specifications: MXP6006DP, MXP6006DT, MXP6006DF, APM9988QB, SM1501GSQH, SM1600DSCS, SM1660DSCS, SM1A23DSK, AON6380, SM2A18DSK, SM3380EHQG, SM3381EHQG, SM9990DSQG, SM9992DSQG, SM9994DSO, SM9998DSQG, SM4040DSK

Keywords - SM2630DSC MOSFET specs

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