All MOSFET. SM2630DSC Datasheet

 

SM2630DSC Datasheet and Replacement


   Type Designator: SM2630DSC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOT23-6
 

 SM2630DSC substitution

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SM2630DSC Datasheet (PDF)

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SM2630DSC

SM2630DSC Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4A,D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2 RDS(ON)=68m(max.) @ VGS=4.5VS2G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(6)D1 (4)D2(1)(3)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equipment and Ba

Datasheet: MXP6006DP , MXP6006DT , MXP6006DF , APM9988QB , SM1501GSQH , SM1600DSCS , SM1660DSCS , SM1A23DSK , IRLZ44N , SM2A18DSK , SM3380EHQG , SM3381EHQG , SM9990DSQG , SM9992DSQG , SM9994DSO , SM9998DSQG , SM4040DSK .

History: STH90N15F4-2

Keywords - SM2630DSC MOSFET datasheet

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