All MOSFET. SM2630DSC Datasheet

 

SM2630DSC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2630DSC
   Marking Code: L30*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOT23-6

 SM2630DSC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2630DSC Datasheet (PDF)

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 sm2630dsc.pdf

SM2630DSC SM2630DSC

SM2630DSC Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4A,D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2 RDS(ON)=68m(max.) @ VGS=4.5VS2G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(6)D1 (4)D2(1)(3)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equipment and Ba

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