All MOSFET. SM3380EHQG Datasheet

 

SM3380EHQG Datasheet and Replacement


   Type Designator: SM3380EHQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN3X3E-8
 

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SM3380EHQG Datasheet (PDF)

 ..1. Size:306K  sino
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SM3380EHQG

SM3380EHQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S2G2S2 30V/18A,RDS(ON) = 10.8m (max.) @ VGS = 10VD1D1RDS(ON) = 17.5m (max.) @ VGS = 4.5V D1G1 Channel 2DFN3x3E-8_EP230V/18A,RDS(ON) = 10m (max.) @ VGS = 10VRDS(ON) = 16m (max.) @ VGS = 4.5VD1 S1/D2(2)(3) (4) 100% UIS Tested ESD ProtectionG1 (1) Reliable and Rugged

 9.1. Size:310K  sino
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SM3380EHQG

SM3381EHQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S2G2S2 30V/18A,RDS(ON) = 20.5m (max.) @ VGS = 10VD1D1RDS(ON) = 30m (max.) @ VGS = 4.5VD1G1 Channel 2DFN3x3E-8_EP230V/18A,RDS(ON) = 10m (max.) @ VGS = 10VRDS(ON) = 16m (max.) @ VGS = 4.5VD1 S1/D2(2)(3) (4) (9) ESD Protection 100% UIS + Rg Tested(1)G1 Reliable an

Datasheet: MXP6006DF , APM9988QB , SM1501GSQH , SM1600DSCS , SM1660DSCS , SM1A23DSK , SM2630DSC , SM2A18DSK , 5N65 , SM3381EHQG , SM9990DSQG , SM9992DSQG , SM9994DSO , SM9998DSQG , SM4040DSK , SM4041DSK , SM4042DSK .

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