All MOSFET. SM7320ESQG Datasheet

 

SM7320ESQG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM7320ESQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35(83) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35(83) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   Cossⓘ - Output Capacitance: 258(860) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052(0.0018) Ohm
   Package: DFN5X6D-8

 SM7320ESQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM7320ESQG Datasheet (PDF)

 ..1. Size:200K  sino
 sm7320esqg.pdf

SM7320ESQG SM7320ESQG

SM7320ESQG Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/64A,G2S2RDS(ON) = 5.2m (max.) @ VGS = 10VD1RDS(ON) = 7.5m (max.) @ VGS = 4.5VD1 Pin1D1G1 Channel 2DFN5x6D-8_EP230V/85A,RDS(ON) = 1.8m (max.) @ VGS =10VRDS(ON) = 2.5m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS + Rg Tested Reliable and RuggedG1 (

 9.1. Size:384K  sino
 sm7321eskp.pdf

SM7320ESQG SM7320ESQG

SM7321ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A, S2G2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VD1D1 Pin1D1 Channel 2 (Integrated Schottky Diode)G130V/50A,DUAL DFN5x6-8RDS(ON) = 2.9m (max.) @ VGS =10VRDS(ON) = 3.75m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and Ru

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQN1N50CTA | VB9220

 

 
Back to Top