SM7360EKQG PDF and Equivalents Search

 

SM7360EKQG Specs and Replacement

Type Designator: SM7360EKQG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35(83) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85(83) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3050(770) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013(0.003) Ohm

Package: DFN5X6D-8

SM7360EKQG substitution

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SM7360EKQG datasheet

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SM7360EKQG

SM7360EKQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 (ESD Protection) S2S2 30V/83A, G2S2 RDS(ON) = 3m (max.) @ VGS = 10V D1 Pin1 D1 RDS(ON) = 5.6m (max.) @ VGS = 4.5V D1 G1 Channel 2 (Integrated Schottky diode) DFN5x6D-8_EP2 30V/85A, RDS(ON) = 1.3m (max.) @ VGS =10V RDS(ON) = 2.0m (max.) @ VGS =4.5V D1 S1/D2 (2)(3)(4) 100% UIS + Rg Te... See More ⇒

Detailed specifications: SM9989DSQA, SM7302ESKP, SM7303ESKP, SM7304ESKP, SM7320ESQG, SM7321ESKP, SM4913TSK, SM7340EHKP, 75N75, SM7370ESKP, APM2605C, APM3095PU, SM1102PSF, SM1401PSS, SM1A16PSU, SM1A16PSUB, SM1A16PSV

Keywords - SM7360EKQG MOSFET specs

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