IRF7603 Datasheet. Specs and Replacement
Type Designator: IRF7603 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO8
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IRF7603 substitution
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IRF7603 datasheet
irf7603pbf.pdf
PD- 95347 IRF7603PbF Lead-Free www.irf.com 1 02/22/05 IRF7603PbF 2 www.irf.com IRF7603PbF www.irf.com 3 IRF7603PbF 4 www.irf.com IRF7603PbF www.irf.com 5 IRF7603PbF 6 www.irf.com IRF7603PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91 ... See More ⇒
irf7603.pdf
PD - 9.1262D IRF7603 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D N-Channel MOSFET VDSS = 30V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (... See More ⇒
irf7601.pdf
PD - 9.1261D IRF7601 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 Low Profile (... See More ⇒
irf7606pbf.pdf
PD - 95245 IRF7606PbF HEXFET Power MOSFET l Generation V Technology A 1 8 l Ultra Low On-Resistance S D l P-Channel MOSFET 2 7 VDSS = -30V S D l Very Small SOIC Package 3 6 S D l Low Profile (... See More ⇒
Detailed specifications: NCEP85T35T, IRF750A, IRF7521D1, IRF7523D1, IRF7524D1, IRF7526D1, IRF7555, IRF7601, AON6380, IRF7604, IRF7606, IRF7663, IRF7805, IRF7807, IRF7809, IRF7811, IRF820
Keywords - IRF7603 MOSFET specs
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