All MOSFET. IRF7663 Datasheet

 

IRF7663 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7663
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8

 IRF7663 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7663 Datasheet (PDF)

 ..1. Size:77K  international rectifier
 irf7663.pdf

IRF7663 IRF7663

PD-91866BIRF7663HEXFET Power MOSFET Trench TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -20V P-Channel MOSFET 2 7S D Very Small SOIC Package3 6S D Low Profile (

 ..2. Size:145K  international rectifier
 irf7663pbf.pdf

IRF7663 IRF7663

PD-95634IRF7663PbFHEXFET Power MOSFETl Trench TechnologyA1 8l Ultra Low On-Resistance S DVDSS = -20Vl P-Channel MOSFET 2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (

 8.1. Size:244K  international rectifier
 irf7665s2tr1pbf irf7665s2trpbf.pdf

IRF7663 IRF7663

PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st

 8.2. Size:247K  international rectifier
 irf7665s2pbf.pdf

IRF7663 IRF7663

PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st

 8.3. Size:326K  international rectifier
 auirf7665s2tr.pdf

IRF7663 IRF7663

PD - 96286BAUIRF7665S2TRAUTOMOTIVE GRADEAUIRF7665S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ.51m Low Qg for Better THD and Improved Efficiencymax. 62m Low Qrr for Better THD and Lower EMIRG (typical)3.5 Low P

 8.4. Size:243K  international rectifier
 auirf7669l2tr1.pdf

IRF7663 IRF7663

PD - 97536AAUIRF7669L2TRAUTOMOTIVE GRADEAUIRF7669L2TR1Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.3.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 4.4m High Power DensityID (Silicon Limited)114A Low Parasitic Par

 8.5. Size:474K  infineon
 auirf7665s2tr.pdf

IRF7663 IRF7663

AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti

 8.6. Size:444K  infineon
 auirf7669l2tr.pdf

IRF7663 IRF7663

AUTOMOTIVE GRADE AUIRF7669L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.5m Exceptionally Small Footprint and Low Profile max. 4.4m High Power Density ID (Silicon Limited) 114A Low Parasitic Parameters Qg (typ

Datasheet: IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF7601 , IRF7603 , IRF7604 , IRF7606 , IRFP250 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRF820AL , IRF820AS .

 

 
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