RFL2N05L Specs and Replacement
Type Designator: RFL2N05L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO205AF
RFL2N05L substitution
- MOSFET ⓘ Cross-Reference Search
RFL2N05L datasheet
Detailed specifications: SM7308CSKP, RFL1N08, RFL1N10, RFL1N18, RFL1N18L, RFL1N20, RFL1N20L, RFL2N05, IRF640N, RFL2N06, RFL2N06L, RFL1P08, RFL1P10, RFP2N18L, AP9916H, AP9916J, SSM70T03H
Keywords - RFL2N05L MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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