RFL1P08 Specs and Replacement
Type Designator: RFL1P08
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
Package: TO205AF
RFL1P08 substitution
- MOSFET ⓘ Cross-Reference Search
RFL1P08 datasheet
Detailed specifications: RFL1N18, RFL1N18L, RFL1N20, RFL1N20L, RFL2N05, RFL2N05L, RFL2N06, RFL2N06L, IRFB4227, RFL1P10, RFP2N18L, AP9916H, AP9916J, SSM70T03H, SSM70T03J, IRF630MFP, IRFD123
Keywords - RFL1P08 MOSFET specs
RFL1P08 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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