All MOSFET. CEB51A3 Datasheet

 

CEB51A3 Datasheet and Replacement


   Type Designator: CEB51A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO263
 

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CEB51A3 Datasheet (PDF)

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CEB51A3

CEP51A3/CEB51A3N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 48A, RDS(ON) =16.5m @VGS = 10V.RDS(ON) =28m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: MDF11N65B , MMIS60R580P , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , 4435 , CEP51A3 , CS4145 , FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C .

History: AUIRLB4030

Keywords - CEB51A3 MOSFET datasheet

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