CEB51A3 Specs and Replacement
Type Designator: CEB51A3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 232 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: TO263
CEB51A3 substitution
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CEB51A3 datasheet
cep51a3 ceb51a3.pdf
CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5m @VGS = 10V. RDS(ON) =28m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
Detailed specifications: MDF11N65B , MMIS60R580P , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , 5N65 , CEP51A3 , CS4145 , FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C .
History: STS4622
Keywords - CEB51A3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STS4622
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