All MOSFET. CEB51A3 Datasheet

 

CEB51A3 Datasheet and Replacement


   Type Designator: CEB51A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO263
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CEB51A3 Datasheet (PDF)

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CEB51A3

CEP51A3/CEB51A3N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 48A, RDS(ON) =16.5m @VGS = 10V.RDS(ON) =28m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

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History: FDMS9620S | IRFI7536G | WMM11N80M3 | HGS120N10SL

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